Diode

KBP206G Datasheet – 2A, 600V, Bridge Rectifier

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Part Number: KBP206G

Function: 600V, 2.0A, glass passivated bridge rectifier

Package: Bridge Type

Manufacturer: Diodes Incorporated.

Image and Pinouts:

KBP206G datasheet

 

Features

1. Glass Passivated Die Construction
2. High Case Dielectric Strength of 1500VRMS
3. Low Reverse Leakage Current
4. Surge Overload Rating to 65A Peak
5. Ideal for Printed Circuit Board Applications UL Listed Under Recognized Component Index, File Number E94661

 

Maximum Ratings

1. Peak Repetitive Reverse Voltage : Vrrm = 600 V
2. Working Peak Reverse Voltage : Vrwm = 600 V
3. DC Blocking Voltage : Vrm = 600 V
4. RMS Reverse Voltage : Vr(rms) = 420 V
5. Average Rectified Output Current : Io = 2.0 A

Mechanical Data

1. Case: KBP
2. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
3. Moisture Sensitivity: Level 1 per J-STD-020
4. Terminals: Finish – Tin Plated Leads. Solderable per MIL-STD-202, Method 208
5. Polarity: Marked on Body
6. Marking: Type Number
7. Weight: 1.52 grams (Approximate)

KBP206G Datasheet


KBP206G pdf

Other data sheets are available within the file: KBP2005G, KBP201G, KBP202G ,KBP204G

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BAS16-02L Datasheet PDF – 80V, 200mA, Switching Diode

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Part Number: BAS16-02L

Function: 80V, 200mA, Silicon Switching Diode

Package: TSLP-2-1

Marking : A6

Manufacturer: Infineon Technologies

Image :

BAS16-02L datasheet

 

Description

This is 80V, 200mA, General Purpose High Speed Switching Diode.

 

Features

1. For high-speed switching applications

2. Electrical insulated diodes

3. Pb-free (RoHS compliant) package1),

4. Qualified according AEC Q101

Text :

Silicon Switching Diode, Preliminary Data Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 Configuration single single, leadless single single single parallel pair, leadless parallel triple parallel triple single 1Pb-containing package may be available upon special request Marking A6s A6 6 A6 white B 6A A6s A6s A6s 1 2009-09-28 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current BAS16 VR VRM IF BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16S BAS16U BAS16W Non-repetitive peak surge forward current t = 1 µs, BAS16/ S/ U/ W/ -03W t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 t=1s Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C Junction temperature Storage temperature IFSM Ptot Tj Tstg BAS16… Value 80 85 250 200 200 250 200 200 250 4.5 2.5 0.5 370 250 250 250 250 250 250 150 -65 …150 Unit V mA A mW °C 2 2009-09-28 BAS16… Thermal Resistance Parameter Junction – soldering point1) BAS16, BAS16S BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16U BAS16W Symbol RthJS Value ≤ 260 ≤ 80 ≤ 120 ≤ 135 ≤ 150 ≤ 125 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Breakdown voltage V(BR) 85 – – I(BR) = 100 µA Reverse current IR VR = 75 V –1 VR = 25 V, TA = 150 °C – – 30 VR = 75 V, TA = 150 °C – – 50 Unit V µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 …

BAS16-02L Datasheet PDF Download


BAS16-02L pdf

Other data sheets are available within the file:  BAS16, BAS16-02V, BAS16-02W, BAS16-03W