1N4007G Diode – 1000V, 1A, Rectifier ( Datasheet PDF )

Part Number: 1N4007G

Function: 1.0A, 1000V, Glass Passivated Rectifier

Package: DO-41 Type

Manufacturer: Rectron Semiconductor, Diodes Incorporated.

Image and Pinouts:

1N4007G datasheet

 

Description

This is 1.0A, 1000V, Glass Passivated Diode.

 

Features

1. Case : Molded plastic

2. Epoxy : Device has UL flammability classification 94V-O

3. Lead : MIL-STD-202E method 208C guaranteed

4. Mounting position : Any

5. Weight : 0.33 gram

 

Features and Benefits :

1. Glass Passivated Die Construction

2. High Current Capability and Low Forward Voltage D

3. Surge Overload Rating to 30A Peak

4. Lead Free Finish, RoHS Compliant

5. Diffused junction

6. High current capability and low forward voltage drop

 

1N4007G Datasheet PDF Download


1N4007G pdf

Other data sheets are available within the file:

1N4001G, 1N4001G-T, 1N4002G, 1N4002G-T, 1N4003G, IN4007G

BAV10 Datasheet PDF – 60V, 300mA, Diode, Rectifier

Part Number: BAV10

Function: 300mA, 60V, High-speed Diode

Package: SOD27, DO-35 Type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Image and Pinouts:

BAV10 datasheet

Description

The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.

Features

1. Hermetically sealed leaded glass SOD27 (DO-35) package

2. High switching speed: max. 6 ns

3. General application

4. Continuous reverse voltage : max. 60 V

5. Repetitive peak reverse voltage : max. 60 V

6. Repetitive peak forward current : max. 600 mA.

Absolute maximum ratings :

1. Repetitive peak reverse voltage : VRRM = 60 V

2. Continuous reverse voltage : VR = 60 V

3. Continuous forward current : IF = 300 mA

4. Repetitive peak forward current : IFRM = 600 mA

 

Ptot total power dissipation Tamb = 25 °C; note 1 – 350 mW

 

Applications

1. High-speed switching

Other data sheets are available within the file: BAV-10

 

BAV10 Datasheet PDF Download


BAV10 pdf