Part Number: MP1008-G

Function: 10A, 800V, Silicon Bridge Rectifier

Manufacturer: Comchip Technology

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Description

The MP1008-G is 10A, 800V, Silicon Bridge Diode.

Features

1. Diffused Junction

2. High Current Capability

3. High Case Dielectric Strength

4. High Surge Current Capability

5. Ideal for Printed Circuit Board Application

6. Plastic Material has Underwriters

7. Laboratory Flammability Classification 94V-0

Mechanical Data

Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 5.4 grams (approx.) Mounting position: Through Hole for #6 Screw D E Dim A B C D E C B Metal Heat Sink KBP Min. Max 14.73 15.75 5.80 6.90 19.00 1.00 O Typical 6.14 5.11 Hole for #6 screw G 3.60 4.00 J 10.30 11.30 2.38×45ºC Typical I All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC MP MP MP MP KBP KBP KBP Symbol 1000-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 10 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM Half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t<8.3ms) (Note2) Typical Thermal Resistance (Note4) Operating and Storage Temperature Range Typical Junction Capacitance  […]

MP1008-G PDF Datasheet

Part Number: BYW85

Function: 600V, 3A, Silicon Mesa Rectifier

Package: SOD-64 Pin Type

Manufacturer: Vishay Telefunken

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Description

BYW85 is 600V, Standard Avalanche Sinterglass Diode (Rectifier). An avalanche diode is a type of semiconductor diode designed to operate in the reverse breakdown region, where a phenomenon called “avalanche breakdown” occurs. This phenomenon involves the sudden and rapid increase in the flow of current through the diode when it is operated in reverse bias beyond its specified breakdown voltage.

1. Avalanche Breakdown: Avalanche breakdown is a phenomenon that occurs in semiconductor materials when the electric field across the diode becomes strong enough to cause the generation of charge carriers (electrons and holes) through collision processes. These newly generated carriers further accelerate and collide with other atoms, leading to a self-sustaining “avalanche” of carriers and a rapid increase in current.

2. Reverse Bias: Avalanche diodes are typically operated in reverse bias, meaning that the voltage applied across the diode is in the direction that normally blocks current flow. As the voltage increases beyond a certain threshold called the “avalanche breakdown voltage,” the diode enters the avalanche breakdown region.

Features

• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• AEC-Q101 qualified […]

Applications:

1. Rectification, general purpose

BYW85 PDF Datasheet