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G10N60A Datasheet PDF – 600V, 10A, IGBT – Infineon

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Part Number: G10N60A, SGB10N60A

Function: 600V, 10A, Fast IGBT in NPT-technology

Package: PG-TO-263-3-2 Type

Manufacturer: Infineon

Image

G10N60A image

Description

This is 600V, 10A, IGBT. The IGBT is insulated-gate bipolar transistor.

 

Features

1. 75% lower Eoffcompared to previous generation combined with low conduction losses

2. Short circuit withstand time – 10 µs

3. Designed for :
(1) Motor controls
(2) Inverter

4. NPT-Technology for 600V applications offers:
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behaviour
(3) Parallel switching capability

5. Qualified according to JEDEC for target applications

6. Pb-free lead plating; RoHS compliant

Pinout:

G10N60A datasheet

G10N60A Datasheet PDF Download

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RJH30H2DPK-M0 Datasheet PDF – 360V, N-Ch, IGBT

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Part Number: RJH30H2DPK-M0

Function: 360V, 35A, N-Channel IGBT

Package: TO-3PSG Type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJH30H2DPK-M0 datasheet

 

Description

This is 360V, Silicon N-Channel IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

3. High speed switching: tr = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES= 1 uA max

5. Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Speed Power Switching

 

RJH30H2DPK-M0 Datasheet PDF Download


RJH30H2DPK-M0 pdf

Other data sheets are available within the file: RJH30H2, RJH30H2DPK