Part Number: G4PF50WD, IRG4PF50WD

Function: 900V, 28A, IGBT ( INSULATED GATE BIPOLAR TRANSISTOR )

Package: TO-247AC Type

Manufacturer: International Rectifier

Images:

Description

G4PF50WD is 900V, 28A, IGBT.

An “Insulated Gate Bipolar Transistor (IGBT) with UltraFast Soft Recovery Diode” is a specific type of power semiconductor device that combines an IGBT and an ultrafast diode in a single package. This combination offers several advantages in high-power switching applications, such as motor drives, power inverters, and other power electronics systems.

Let’s break down the key components:

1. IGBT (Insulated Gate Bipolar Transistor): The IGBT is a type of transistor that combines the features of a MOSFET (voltage-controlled) and a BJT (current-controlled). It is widely used in high-power applications due to its ability to handle high voltage and current while being easily controllable with a low-power signal.

2. UltraFast Soft Recovery Diode: The diode integrated into the IGBT package is an “UltraFast Soft Recovery Diode.” Diodes are used as freewheeling or rectification elements in power electronic circuits. An UltraFast Soft Recovery Diode has a short reverse recovery time, which means it can switch off quickly when the current direction changes, reducing switching losses and improving overall efficiency.

Features

• Optimized for use in Welding and Switch-Mode Power Supply applications

• Industry benchmark switching losses improve efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

 

Benefits:

• Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

G4PF50WD PDF Datasheet

Part Number: G4PC50UD, IRG4PC50UD

Function: 600V, 55A, IGBT

Package: TO-247AC type

Manufacturer: International Rectifier

Images:

 

Description

G4PC50UD is 600V, 55A, IGBT. An “Insulated Gate Bipolar Transistor (IGBT) with UltraFast Soft Recovery Diode” is a specific type of power semiconductor device that combines an IGBT and an ultrafast diode in a single package. This combination offers several advantages in high-power switching applications, such as motor drives, power inverters, and other power electronics systems.

Let’s break down the key components:

1. IGBT (Insulated Gate Bipolar Transistor): The IGBT is a type of transistor that combines the features of a MOSFET (voltage-controlled) and a BJT (current-controlled). It is widely used in high-power applications due to its ability to handle high voltage and current while being easily controllable with a low-power signal.

2. UltraFast Soft Recovery Diode: The diode integrated into the IGBT package is an “UltraFast Soft Recovery Diode.” Diodes are used as freewheeling or rectification elements in power electronic circuits. An UltraFast Soft Recovery Diode has a short reverse recovery time, which means it can switch off quickly when the current direction changes, reducing switching losses and improving overall efficiency.

 

Features:

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

 

Benefits:

• Generation 4 IGBT’s offer highest efficiencies available

• IGBT’s optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing

• Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s

 

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to emitter Voltage: Vces = 600 V

2. Gate to emitter Voltage: Vges = ± 20 V

3. Collector Current: Ic = 55 A

4. Maximum Power Dissipation: Pc = 200 W

5. Junction temperature: Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC50UD PDF Datasheet