Part Number: K40H1203, IKW40N120H3

Function: 1200V, 40A, IGBT

Package: TO-247 Type

Manufacturer: Infineon

Images:

Description

K40H1203 is IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• very low VCEsat

• low EMI

• Very soft, fast recovery anti-parallel diode

• maximum junction temperature 175°C

• qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

 

Applications:

• uninterruptible power supplies

• welding converters

• converters with high switching frequency

K40H1203 PDF Datasheet

Part Number: GB15B60KD, IRGB15B60KD

Function: 600V, 15A, IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Images:

Description

GB15B60KD is 600V, 15A, IGBT. An Insulated Gate Bipolar Transistor (IGBT) with an Ultrafast Soft Recovery Diode is a specialized power semiconductor device that combines the characteristics of an IGBT and a fast recovery diode into a single package. This combination enhances the performance and efficiency of certain power electronics applications, particularly in high-frequency switching circuits.

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

 

[ … ]

IGBTs with integrated ultrafast soft recovery diodes are commonly used in high-frequency switching applications, such as motor drives for electric vehicles, renewable energy inverters, and switch-mode power supplies.

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to emitter Voltage: Vces = 600 V

2. Gate to emitter Voltage: Vges = ± 20 V

3. Collector Current: Ic = 31 A

4. Maximum Power Dissipation: Pd = 208 W

5. Junction temperature: Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Benefits:

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation

GB15B60KD PDF Datasheet