29LV160CBTC-90G Datasheet PDF – 16Mbit, Flash Memory

Part Number: 29LV160CBTC-90G

Function: 16M-BIT, CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Package : 48 Pin TSOP

Manufacturer: Macronix International ( http://www.macronix.com/ )

Image and Pinouts:

29LV160CBTC-90G datasheet

 

Description

The 29LV160CBTC-90G is a 16-mega bit Flash memory organized as 2M bytes of 8 bits or 1M words of 16 bits. MXIC’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV160C T/B is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

Features

1. Extended single – supply voltage range 2.7V to 3.6V

2. 2,097,152 x 8/1,048,576 x 16 switchable

3. Single power supply operation
(1)  3.0V only operation for read, erase and program operation

4. Fully compatible with MX29LV160B device

5. Fast access time: 55R/70/90ns

6. Low power consumption
(1) 30mA maximum active current
(2)  0.2uA typical standby current

Other data sheets are available within the file:

29LV160CBMC-55Q, 29LV160CBMC-55R, 29LV160CBMC-70, 29LV160CBMC-70G, 29LV160CBMC-90

29LV160CBTC-90G Datasheet PDF Download


29LV160CBTC-90G pdf

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UT62L5128LS-55LLI Datasheet – 512 K x 8 Bit CMOS SRAM

Part Number: UT62L5128LS-55LLI

Function: Access time 55 ns, 512 K x 8 Bit low power CMOS SRAM

Package: SOP 32 Pin Type

Manufacturer: Utron Technology Inc

Pinouts:

UT62L5128LS-55LLI datasheet

Description

The UT62L5128LS is a 4,194,304-bit high speed CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62L5128 is designed for high speed system applications. It is particularly well suited for battery back-up nonvolatile memory applications. The UT62L5128 operates from a single 2.7V~3.6V power supply and all inputs and outputs are fully TTL compatible.

CMOS SRAM stands for Complementary Metal-Oxide-Semiconductor Static Random-Access Memory. It is a type of semiconductor memory that is used in many electronic devices such as computers, smartphones, and other digital devices.

SRAM is a type of volatile memory that stores digital data using electronic circuits called flip-flops. CMOS is a type of semiconductor technology that is used to make electronic circuits that consume very little power and are highly resistant to noise.

CMOS SRAM has several advantages over other types of memory, including high-speed operation, low power consumption, and high density.

Features

1. CMOS Low operating power
2. Single 2.7V~3.6V power supply
3. All inputs and outputs TTL compatible
4. Fully static operation
5. Three state outputs
6. Data retention voltage : 1.5V (min)

Other data sheets are available within the file:

UT62L5128BS, UT62L5128BS-55L, UT62L5128BS-55LE, UT62L5128BS-55LI, UT62L5128LS-55LL

UT62L5128LS-55LLI Datasheet PDF Download


UT62L5128LS-55LLI pdf