N25Q128A PDF Datasheet – Serial NOR Flash Memory

Part Number: N25Q128A

Function: NOR Flash Memory

Package: SO 8, SO 16 Pin Type

Manufacturer: Micron

Images:

N25Q128A datasheet pdf

Description

The N25Q128A is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. [ …. ]

Features

The memory is organized as 256 (64KB) main sectors that are further divided into 16
subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protection.

 

1. SPI-compatible serial bus interface

2. 108 MHz (MAX) clock frequency

3. 1.7–2.0V single supply voltage

4. Dual/quad I/O instruction provides increased throughput up to 432 MHz

 

N25Q128A Datasheet

Related articles across the web

AM29F016B Datasheet PDF – 16 Megabit, Flash Memory

Part Number: AM29F016B

Function: 16 Megabit (2 M x 8-Bit) / CMOS 5.0 volt-only Uniform Flash Memory

Pakcage : 48-pin and 40-pin TSOP, 44-pin SO

Manufacturer: Advanced Micro Devices

Image and Pinouts:

AM29F016B datasheet

 

Description

The AM29F016B is a 16 Mbit, 5.0 volt-only Flash memory organized as 2,097,152 bytes. The 8 bits of data appear on DQ0–DQ7. The device is offered in 48-pin and 40-pin TSOP, and 44-pin SO packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21551. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPPis not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

Features

1. 5.0 V ± 10%, single power supply operation
(1) Minimizes system level power requirements

2. Manufactured on 0.32 μm process technology
(1) Compatible with 0.5 μm Am29F016 device

3. High performance
(1) Access times as fast as 70 ns

4. Low power consumption
(1) 25 mA typical active read current
(2)  30 mA typical program/erase current
(3) 1 μA typical standby current (standard access time to active mode)

Other data sheets are available within the file:

AM29F016B120, AM29F016B120DGC1, AM29F016B120DGI1

AM29F016B Datasheet PDF Download


AM29F016B pdf