MMN2716 Datasheet PDF – 2048 x 8 Bit EPROM, 24 Pin

Part Number: MMN2716

Function: 2048 x 8 BIT EPROM

Package: 24 Pin DIP Type

Manufacturer: Micro Electronics

Pinouts:

MMN2716 datasheet

 

Description

The MMN2716 is a static, electrically programmable read-only memory (16k EPROM) which has a transparent lid to allow erasure of the bit pattern with ultraviolet light. The device is fabricated with N-Channel silicon gate technology.

Features

1. The device is a 2048 x 8 bit UV erasable PROM

2. Single 5 volts supply in READ mode

3. Standby mode of operation reduces the active device power by 75% approx.

4. Tri-state outputs, bidirectional data pins

5. Programming with 50-ms TTL level pulses

Other data sheets are available within the file: MMN2616-1, MMN2616-2, MMN2716-1

MMN2716 Datasheet PDF Download


MMN2716 pdf

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ADS6608A4A-75 Datasheet PDF -Synchronous DRAM

Part Number: ADS6608A4A-75

Function: Synchronous DRAM, 2M x 8 Bit x 4 Banks, 133 Mhz LVTTL

Package: 400mil 54pin TSOPII

Manufacturer: A-Data Technology

Pinouts:

ADS6608A4A-75 datasheet

Description

The ADS6608A4A-75 are four-bank Synchronous DRAMs organized as 2,097,152 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on everyclock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a varietyof high bandwidth high performance memory system applications

Features

1. JEDEC standard LVTTL 3.3V power supply
2. MRS Cycle with address key programs
(1) CAS Latency (2 & 3)
(2) Burst Length (1,2,4,8,& full page)
(3) Burst Type (sequential & Interleave)
3. 4 banks operation
4. All inputs are sampled at the positive edge of the system clock
5. Burst Read single write operation
6. Auto & Self refresh
7. 4096 refresh cycle
8. DQM for masking

 

Other data sheets are available within the file: ADS6608A4A

ADS6608A4A-75 Datasheet PDF Download


ADS6608A4A-75 pdf