2SK3599 Datasheet PDF – 100V, 29A, MOSFET, Transistor

Part Number: 2SK3599

Function: 100V, 29A, N-Channel, MOSFET

Package: TO-220F Type

Manufacturer: Fuji Electric

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2SK3599 datasheet pdf

Description

The 2SK3599 is a 100V N-channel silicon power MOSFET designed for high-speed switching and efficient power control applications. It features low on-resistance, avalanche ruggedness, and low gate drive requirements, making it suitable for high-efficiency switching designs. This device is commonly used in switching regulators, UPS systems, and DC-DC converter circuits.

Features

  • High-speed switching capability
  • Low drain-source ON resistance for improved efficiency
  • No secondary breakdown characteristic
  • Low gate drive power requirement
  • Avalanche-proof design for enhanced reliability
  • High current handling capability up to 29A

Pinout

2SK3599 datasheet

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 29 A
Power Dissipation Pd 2.16 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Low RDS(on) enables efficient conduction with reduced power loss
  • High-speed switching requires careful PCB layout to minimize parasitics
  • Avalanche capability improves robustness under transient conditions
  • Ensure adequate thermal path despite relatively low package dissipation rating
  • Gate resistor may be used to balance switching speed and EMI

Typical Circuit Usage

  • Switching regulator power stages
  • DC-DC converter switching elements
  • UPS inverter and power control circuits
  • Load switching in medium-voltage systems
  • Synchronous rectification applications

How to Choose This Part

  • Select for applications up to 100V with high current demand
  • Ideal for high-efficiency switching designs
  • Ensure thermal dissipation is managed within limits
  • Verify gate drive compatibility for optimal switching
  • Consider avalanche rating for inductive load environments

Applications

  • Switching regulators
  • UPS (Uninterruptible Power Supply)
  • DC-DC converters
  • Power management systems
  • Industrial switching circuits

Alternative / Equivalent Products

  • IRF540N (100V power MOSFET)
  • STP55NF06 (low RDS(on) MOSFET)
  • FQP30N06L (logic-level alternative)
  • 2SK3563 (similar N-channel MOSFET)
  • IPP110N10N3 (high-efficiency MOSFET)

Other data sheets are available within the file: K3599, 2SK359901MR, K3599-01MR

2SK3599 Datasheet PDF Download

QN3103 Datasheet PDF – 30V Fast Switching MOSFET

Part Number: QN3103M6N

Function: N-Channel 30V, 68V, Fast Switching MOSFET

Package: PRPAK 5X6 Pin Type

Manufacturer: UBIQ Semiconductor

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QN3103 datasheet

Description

The QN3103 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved.

Features

1. Advanced high cell density Trench technology

2. Super Low Gate Charge

3. Green Device Available

 

Pinouts

QN3103 pinout

Applications

 

• High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA

• Networking DC-DC Power System

• Load Switch

 

 

QN3103 Datasheet

8602GN pdf