4407A Datasheet – 30V, P-Ch, MOSFET, Transistor, AO4407A

This is a kind of MOSFET.

Part Number: 4407A, AO4407A

Function: 30V, 12A, P-Channel MOSFET

Package: SOIC-8 Type

Manufacturer: Alpha and Omega Semiconductor

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4407A datasheet

Description

The 4407A uses advanced trench technology to provide excellent R DS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable foruse as a load switch or in PWM applications.

The AO4407A is a P-channel power MOSFET in an 8-pin SOIC package, optimized for high-efficiency load switching and DC-DC conversion. It uses advanced trench MOSFET technology to achieve very low RDS(ON) and low gate charge, making it highly suitable for battery-powered and power management applications.

Pinout

4407A pinout

Product Summary (Ta = 25°C)

1. Drain-Source Voltage : VDS = -30V

2. Continuous Drain Current : ID = -12A (VGS = -20V)

3. RDS(ON) < 11mΩ (VGS = -20V)

4. RDS(ON) < 13mΩ (VGS = -10V)

5. RDS(ON) < 17mΩ (VGS = -6V)

6. Power Dissipation: Pd = 3.1 W

7. Junction Temperature: Tj = 150°C

8. Storage Temperature: Tsg = -55 ~ +150°C

Design Notes (Critical Points)

  • Ensure sufficient negative VGS for full enhancement
  • Use gate resistor to control switching speed and ringing
  • Provide adequate PCB copper for thermal dissipation
  • Check SOA (Safe Operating Area) for high current pulses
  • Consider paralleling devices for higher current applications

Typical Applications

  • High-side load switch
  • Battery protection circuits
  • DC-DC buck/boost converters (as high-side switch)
  • Power path control (adapter ↔ battery selection)
  • Hot-swap and power OR-ing circuits

Alternative / Equivalent Products

  • IRF7416 (P-channel MOSFET)
  • Si4435DY
  • FDN306P (lower current applications)
  • AO4409 (higher performance variant)

Other data sheets are available within the file: AO4407A

4407A Datasheet PDF Download

4407A pdf

MP3401A PDF Datasheet – 30V, 3A, P-Ch, MOSFET

Part Number: MP3401A

Function: -30V, -3A, P-Channel Enhancement Mode MOSFET

Package: SOT-23 Type

Manufacturer: Major Power

Images:MP3401A pdf pinout

Description

MP3401A is 30V, 3A, P-Channel Enhancement Mode MOSFET. This is a type of field-effect transistor with P-channel conductivity. This means it uses positively charged carriers (holes) to conduct electrical current.

1. P-Channel Conductivity: In a P-channel MOSFET, the channel between the source and drain is formed within a P-type semiconductor material. When a positive voltage is applied to the gate terminal relative to the source terminal, it creates an electric field that attracts positively charged holes to the surface, allowing current to flow from the source to the drain.

2. Enhancement-Mode Operation: P-channel Enhancement-Mode MOSFETs are normally off devices. This means that when there is no voltage applied to the gate terminal (V_GS = 0V), the transistor is in its off state, and very little current flows between the source and drain. To turn the MOSFET on, a positive voltage (V_GS > 0V) is applied to the gate terminal.

Features

• -30V/-3A,

(1) RDS(ON)=46mΩ (typ.) @ VGS=-10V

(2) RDS(ON)=55mΩ (typ.) @ VGS=-4.5V

(3) RDS(ON)=79mΩ (typ.) @ VGS=-2.5V

• Super High Dense Cell Design

• Reliable and Rugged

• Enhance ESD Cell Protection

• Lead Free and Green Devices Available (RoHS Compliant

 

MP3401A datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30 V

2. Gate to source voltage: VGSS = ± 10 V

3. Drain current: ID = – 3

4. Maximum Power Dissipation: Pd = 0.83 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Power Management in LCD TV,  Monitor, Note book Computer

2. Portable Equipment and Battery, Powered Systems

MP3401A PDF Datasheet

 pdf