MOSFET archives - Page 139 of 1244

Features

1. 60V/ A, RDS(ON) =10.5 mW (typ.) @ VGS =10V

2. Avalanche Rated

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)

5. Power Management for Inverter Systems

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 65 A

4. Maximum Power Dissipation: Pd = 130 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Part Number: SVF2N60F

Function: 2A, 600V, N-CHANNEL MOSFET

Package: TO-251, TO-252, TO-220 Type

Manufacturer: Silan Microeletronics

Images: SVF2N60F pdf pinout

Description

SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Features

1. 2A,600V,RDS(on)(typ.)=3.7@VGS=10V

2. Low gate charge

3. Low Crss

4. Fast switching

5. Improved dv/dt capability

SVF2N60F datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2 A

4. Total Power Dissipation: Pd = 23 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MOSFET

HY1606A PDF – N-Ch, 60V, 60A, MOSFET ( Datasheet )

Description

Features

HY1606A PDF Datasheet

SVF2N60F PDF Datasheet – 2A, 600V, N-CHANNEL MOSFET

Description

Features

SVF2N60F PDF Datasheet