This post explains for the MOSFET.

The Part Number is 2SK2645-01MR.

The function of this semiconductor is N-Channel MOSFET.

Manufacturer: Fuji Electric

Preview images :

Description

K2645-01MR IS 600V, 9A, N-CHANNEL SILICON POWER MOSFET. An N-Channel Silicon Power MOSFET is a type of power MOSFET that uses N-type silicon semiconductor material in its channel region. This type of MOSFET is designed to handle high power levels and is commonly used in various power electronics applications.

1. N-Channel MOSFET: In an N-Channel MOSFET, N-type semiconductor material is used as the channel between the source and drain terminals. In this configuration, electrons are the majority charge carriers, and the flow of electrons (current) is controlled by the gate-source voltage.

Features

1. High speed switching

2. Low on-resistance

3. No secondary breadown

4. Low driving power

5. Avalanche-proof

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 35 V

3. Drain current: ID = 9 A

4. Max. Power dissipation : Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

K2645-01MR PDF Datasheet

This post explains for the MOSFET.

The Part Number is 40T03GH, AP40T03GH.

The function of this semiconductor is 30V, N-Channel MOSFET.

The package is TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics

Preview images :

Description

40T03GH is 30V, 28A, MOSFET. 

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications.

Features

1. Simple Drive Requirement

2. Low Gate Charge

3. Fast Switching

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 28 A

4. Total Power Dissipation: Pd = 31.25 W

5. Storage Temperature : Tch = -55 to +150 °C

6. Operating Junction temperature : Tstg = -55 to +150 °C

 

40T03GH PDF Datasheet