4N60B PDF Datasheet – 600V, 4A, N-Ch, Power MOSFET

This post explains for the MOSFET.

The Part Number is 4N60B, ANP4N60B, SSP4N60B, SSS4N60B.

The function of this semiconductor is 600V, 4A, MOSFET.

Manufacturer: angstrem, Fairchild

Preview images :4N60B pinout mosfet

Description

4N60B is 600V, 4A, N-Channel Power MOSFET. These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Applications:

1. SMPS

2. PFC

Features

1. Low Qg

2. Low Rdson

3. RoHS compliant

4. Marking : A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B

 

4N60B pdf datasheet

 

4N60B PDF Datasheet


 

Similar features and reference parts

4835P PDF Datasheet – P-Channel, (-) 30V, MOSFET – AF4835P

This post explains for the Power MOSFET.

The Part Number is 4835P.

The function of this semiconductor is P-Channel Enhancement Mode Power MOSFET.

The Package is SOP-8 Pin Type

Manufacturer: Anachip Corporation

Preview images :AF4835P pdf pinout

Description

4835P is P-Channel Enhancement Mode Power MOSFET. A P-Channel Enhancement Mode Power MOSFET is a type of power MOSFET that operates using P-type semiconductor material as its channel and is designed to handle high power levels. In this context, “enhancement mode” refers to the behavior of the MOSFET’s gate-source voltage relationship, which determines how the transistor turns on and off.

The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

1. Gate Voltage: For a P-Channel Enhancement Mode Power MOSFET, you typically need to apply a more positive gate-source voltage (compared to the source voltage) to turn the transistor on. This positive gate voltage creates a channel for current to flow from the source to the drain.

2. Voltage Control: By varying the gate-source voltage, you can control the flow of current between the source and drain terminals. A higher positive gate-source voltage results in a wider channel and increased current flow.

3. Low-Side Switching: P-Channel Enhancement Mode Power MOSFETs are commonly used for low-side switching applications, where the MOSFET is placed between the load and the ground. When the MOSFET is turned on, it allows current to flow from the supply voltage through the load to the ground.

 

Features

1. Simple Drive Requirement

2. Low On-resistance

3. Fast Switching

AF4835P datasheet mosfet

4835P PDF Datasheet