Part Number: IRF1730G
Function: Power MOSFET (Vdss=400V / Rds(on)=1.0ohm / Id=3.7A)
Package: TO-220 Type
Manufacturer: International Rectifier
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Description
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of field-effect transistor specifically designed to handle high power levels and serve as a switch or amplifier in power electronics applications. It is widely used in various industries, including power supplies, motor drives, lighting systems, automotive electronics, and renewable energy systems.
Features:
1. Power MOSFET: The IRF1730G is a high-voltage N-channel power MOSFET designed for various power switching applications.
2. Voltage and Current Ratings: It has a maximum drain-source voltage (Vds) rating of 100V, meaning it can handle a maximum voltage of 100 volts across its drain and source terminals. The maximum continuous drain current (Id) is specified as 42A, representing the maximum current that can flow through the MOSFET under normal operating conditions.
3. RDS(on): The on-resistance (RDS(on)) of the IRF1730G is specified as 0.023 ohms, which indicates the resistance between the drain and source when the MOSFET is fully turned on. A lower RDS(on) value represents a more efficient and less resistive MOSFET.
4. Gate Voltage Range: The recommended gate-source voltage (Vgs) range for proper operation of the IRF1730G is typically between 2V and 4V.
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IRF1730G PDF Datasheet
