MOSFET

FDD6530A Datasheet PDF – 20V, 21A, N-Ch, MOSFET

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Part Number: FDD6530A

Function: 20V, 21A, N-Channel MOSFET

Package: TO-252 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDD6530A datasheet

 

Description

The FDD6530A is 20V, 21A, N-Channel PowerTrench MOSFET.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

1. Low gate charge (6.5 nC typical)

2. Fast switching

3. High performance trench technology for extremely low RDS(ON)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 8 V

3. Drain current: ID = 21 A

4. Power Dissipation: Pd = 33 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. DC/DC converter

2.  Motor drives

Other data sheets are available within the file: FDD6530, FDD-6530, FDD-6530A

 

FDD6530A Datasheet PDF Download


FDD6530A pdf

FQP44N10 Datasheet PDF – 100V, 43.5A, N-Ch, MOSFET

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Part Number: FQP44N10

Function: N-Channel QFET MOSFET ( 100 V, 43.5 A, 39 mΩ )

Package: TO-220 Type

Manufacturer: Fairchild, ON Semiconductor

Image and Pinouts:

FQP44N10 datasheet

 

Description

This is 100V, 43.5A, N-Channel MOSFET.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

1. 43.5 A, 100 V, Rds(on)= 39 mΩ(Max.) @Vgs= 10 V, ID = 21.75 A

2. Low Gate Charge (Typ. 48 nC)

3. Low Crss (Typ. 85 pF)

4. 100% Avalanche Tested

5. 175°C Maximum Junction Temperature Rating

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 43.5 A (Tc = 25°C)

4. Power Dissipation: Pd = 146 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: FQP-44N10

FQP44N10 Datasheet PDF Download


FQP44N10 pdf