MOSFET

2SK3699-01MR Datasheet PDF – 900V, 3.7A, MOSFET, Transistor

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Part Number: 2SK3699-01MR

Function: 900V, 3.7A, MOSFET

Package: TO-220F Type

Manufacturer: Fuji Electric

Image and Pinouts:

2SK3699-01MR datasheet

Description

This is 900V, 3.7A, N-CHANNEL SILICON POWER MOSFET.

 

Features

1. High speed switching

2. Low on-resistance

3. No secondary breadown

4. Low driving power

5. Avalanche-proof

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.7 A

4. Maximum Power Dissipation: Pd = 2.16 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

 

2SK3699-01MR Datasheet PDF Download


2SK3699-01MR pdf

Other data sheets are available within the file: 2SK3699, 2SK3699-01, K3699, K3699-01MR

70T03GH Datasheet PDF – 30V, 60A, N-Ch, Power MOSFET

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Part Number: 70T03GH, SSM70T03GH, AP70T03GH

Function: N-channel Enhancement-mode Power MOSFET

Package: TO-251, TO-252 Type

Manufacturer: Silicon standard

Image and Pinouts:
70T03GH datasheet

Description

The SSM70T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.

The 70T03GH is in a TO-252 Package, which is widely used for commercial and industrial surface-mount applications.

These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.

Advantages Vs Disadvantages

Advantages:

1. High current handling capabilities:

Maximum continuous drain current of 60A, making it suitable for use in circuits that require high current handling capabilities.

2. Low on-resistance:

The MOSFET has a low on-resistance, which minimizes power dissipation and improves efficiency.

3. Fast switching speed:

The MOSFET has a fast switching speed, which makes it suitable for use in applications that require high-frequency switching.

4. High reliability:

The MOSFET has a high thermal and electrical stability, making it reliable for use in a variety of electronic circuits.

Disadvantages:

1. Limited voltage handling capabilities:

The MOSFET has a maximum drain-source voltage of 30V, which may limit its use in applications that require higher voltage handling capabilities.

2. Gate threshold voltage:

The MOSFET has a gate threshold voltage of 2-4V, which may require additional circuitry to ensure proper gate control.

The 70T03GH is a powerful MOSFET that can be used in a wide range of electronic circuits for power switching applications. Its high current handling capabilities, low on-resistance, and fast switching speed make it suitable for use in high-power motor control, DC-DC converters, and power supply circuits.

Features

1. Simple Drive Requirement

2. Low Gate Charge

3. Fast Switching

4. RoHS Compliant

5. BVDSS 30V, RDS(ON) 9mΩ, ID 60A

70T03GH Datasheet PDF Download :

Similar features and reference parts


70T03GH pdf
Other data sheets are available within the file: 70T03-GH, 70T03J