MOSFET archives - Page 219 of 1244

Features

1. N channel

2. Logic level

3. Enhancement mode

4. Temperature sensor with thyristor characteristic

5. The drain pin is electrically shorted to the tab

Absolute Maximum Ratings :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 10 V

3. Drain current: ID = 22 A

4. Power Dissipation : Ptot = 95 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Part Number: FQD2N60C

Function: N-Channel MOSFET / 600V, 1,9A, 4.7 Ohm

Package: D-PAK, I-PAK

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FQD2N60C datasheet

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

1. 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A

2. Low Gate Charge (Typ. 8.5 nC)

3. Low Crss (Typ. 4.3 pF)

4. 100% Avalanche Tested

5. RoHS Compliant

Ordering Information :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 1.9 A (Tc = 25°C)

4. Power Dissipation: Pd = 2.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

FQU2N60C, FQD2N60CTF, FQD2N60CTM, FQU2N60C, FQU2N60CTU, FQD2N60CTM

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