MOSFET

2SJ602 MOSFET – 60V, 20A, P-Ch, Transistor ( Datasheet PDF )

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Part Number: 2SJ602

Function: – 60V, SWITCHING P-CHANNEL POWER MOSFET

Package: TO-220AB Type

Manufacturer: NEC ( Renesas Technology )

Image:

2SJ602 datasheet

 

Description

The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver, On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation.

Features

1. Super low on-state resistance :

(1) RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A)
(2) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A)

2. Low input capacitance : Ciss = 1300 pF TYP. (VDS = −10 V, VGS = 0 V)

3. Built-in gate protection diode

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 20 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2SJ602 Datasheet PDF Download


2SJ602 pdf

Other data sheets are available within the file: SJ602, 2SJ602S, 2SJ602Z, 2SJ602ZJ

15N03 Datasheet PDF – 30V, 15A, N-Ch, MOSFET – APEC

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Part Number: 15N03

Function: 30V, 15A, N-Channel Power MOSFET

Manufacturer: Advanced Power Electronics Corp.

Package: TO-252(H)

Image:
15N03 image

Description

The 15N03 is 30V, 15A, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP15N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.

Features

1. Low Gate Charge

2. Simple Drive Requirement

3. Fast Switching

4. RoHS Compliant

Pinouts:

15N03 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 15 A

4. Total Power Dissipation: Pd = 26 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

15N03 Datasheet PDF


 

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