Part Number: BUZ91AF

Function: 600V, 8A, N-Channel MOSFET, Transistor

Package: TO-220 AB Type

Manufacturer: Siemens AG

Image and Pinouts:

Description

This is 600V, 8A, N-Channel SIPMOS MOSFET ( Power Transistor ).

Features

1. N channel

2. Enhancement mode

3. Avalanche-rated

Maximum Ratings :

1. Continuous drain current : Id = 8 A

2. Pulsed drain current : Id plus = 32 A

3. Avalanche current,limited by Tjmax : Iar = 8 mJ

4. Avalanche energy,periodic limited by Tjmax : Ear = 13 mJ

5. Gate source voltage : VGS : ± 20V

6. Power dissipation Tc=25°C : Ptot = 150 W

Other data sheets are available within the file: BUZ91A, BUZ91, C67078-S1342-A3

BUZ91AF Datasheet PDF Download

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Part Number: 1N60

Function: 1.2A, 600V, N-CHANNEL POWER MOSFET

Package: TO-251, TO-252, TO-220, TO-220F Type

Manufacturer: Unisonic Technologies

Image

 

Description

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Pinout

Features

1. RDS(ON) =9.3Ω@VGS = 10V.
2. Ultra Low gate charge (typical 5.0nC)
3. Low reverse transfer capacitance (CRSS = typical 3.0 pF)
4. Fast switching capability
5. Avalanche energy specified
6. Improved dv/dt capability, high ruggedness

 

1N60 Datasheet PDF Download

Other data sheets are available within the file: 1N60G-AA3-R, 1N60G-T60-K, 1N60G-T92-B, 1N60G-T92-K