Part Number: K3157

Function: 20A, 150V, Silicon N Channel MOSFET

Package: TO-220FM Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

Description

This is N-channel MOSFET.

Features

1. Low on-resistance RDS= 50 mΩ typ.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 20 A
4. Drain peak current : ID(pulse)  = 80 A
5. Body-drain diode reverse drain current : IDR = 20 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 30 mJ
8. Channel dissipation: Pch = 35 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature: Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

Other data sheets are available within the file: 2SK3157

K3157 Datasheet PDF Download

Part Number: 2SK2019-01

Function: 3.5A, 500V, 40W, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Fuji Electric

Image and Pinouts:

Description

This is 500V, 3.5A, N-Channel MOSFET.

Features

1. High Speed Switching

2. Low On-Resistance

3. No Secondary Breakdown

4. Low Driving Power

5. High Voltage

6. VGS= ± 30V Guarantee

7. Avalanche Proof

Absolute Maximum Ratings (TC=25°C)

1. Drain-Source-Voltage : VDS = 500 V

2. Drain-Gate-Voltage (RGS=20KW): VDGR = 500 V

3. Continous Drain Current : ID = 3.5 A

4. Pulsed Drain Current : ID(puls) = 14 A

5. Gate-Source-Voltage : VGS = ±30 V

6. Max. Power Dissipation : PD = 40 W

7. Operating and Storage Temperature Range : Tch = 150 °C

Applications:

1. Switching Regulators

2. UPS

3. DC-DC converters

4. General Purpose Power Amplifier

Other data sheets are available within the file: 2SK2019, K2019-01, K2019

2SK2019-01 Datasheet PDF Download