MOSFET

KU034N08P Datasheet PDF – 75V, N-Ch, MOSFET

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Part Number: KU034N08P

Function: 75V, N-channel Trench MOSFET

Pacakge : TO-220AB Type

Manufacturer: KEC

Pinouts:

KU034N08P datasheet

 

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications.

Features

1. VDSS= 75V, ID= 170A

2. Drain-Source ON Resistance : RDS(ON)=3.4mΩ(Max.) @V GS= 10V

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 75 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 170 A

4. Allowable Power Dissipation: Pd = 192 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

KU034N08P Datasheet PDF Download


KU034N08P pdf

Other data sheets are available within the file: KU034N08

K2590 Datasheet PDF – 200V, 7A, N-Ch, MOSFET

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Part Number: K2590

Function: 7A, 200V, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2590 datasheet

Description

This is Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No Secondary Breakdown
5. Suitable for Switching regulator, DC-DC converter, Motor Control

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 7 A
4. Drain peak current : ID(pulse) =  28 A
5. Body to drain diode reverse drain current : IDR = 7 A
6. Channel dissipation: Pch =  50 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

components

Application

1. High speed power switching

Other data sheets are available within the file: 2SK2590

K2590 Datasheet PDF Download


K2590 pdf