BSS84AKM Datasheet PDF – 50V, 230mA, P-Ch, MOSFET

Part Number: BSS84AKM

Marking : ZA

Function: -50 V, -230 mA, P-channel MOSFET

Package: SOT883 (SC-101) type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

BSS84AKM datasheet

 

Description

This is -50 V, -230 mA, P-channel Trench MOSFET.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device(SMD) plastic package using Trench MOSFET technology.

 

Features

1. Logic-level compatible

2. Very fast switching

3. Trench MOSFETtechnology

4. ESD protection up to 1 kV

5. AEC-Q101 qualified

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 230 mA

4. Total Power Dissipation : Ptot = 340 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

Other data sheets are available within the file: BSS84AK, BSS84A, BSS84

 

BSS84AKM Datasheet PDF Download


BSS84AKM pdf

2SK3061 NEC Datasheet PDF – 60V, 70A, N-Ch, MOSFET

Part Number: 2SK3061

Function: 70A, 60V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:

2SK3061 datasheet

Description

Th K3061 is 60V, 70A, N-Channel MOSFET.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1.  Low on-state resistance
(1) RDS(on)1= 8.5 mΩ MAX. (VGS= 10 V, ID= 35 A)
(2) RDS(on)2= 12 mΩ MAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss : Ciss= 5200 pF TYP.
3. Built-in gate protection diode
4. Isolated TO-220 package

Equivalent Circuit

components

Absolute maximum ratings :

1. Drain to Source Voltage : VDSS = 60 V

2. Gate to Source Voltage : VGSS(AC) = ±20 V

3. Gate to Source Voltage : VGSS(DC) = +20, -10 V

4. Drain Current (DC) : ID(DC) = ±70 A

5. Drain Current (pulse) : ID(pulse) = ±280 A

6. Total Power Dissipation (TC = 25°C) : PT = 35 W

7. Total Power Dissipation (TA = 25°C) : PT = 2.0 W

8. Channel Temperature : Tch = 150 °C

9. Storage Temperature : Tstg = -55 to +150 °C

10. Single Avalanche Current : IAS = 35 A

11. Single Avalanche Energy : EAS = 122.5 mJ

Other data sheets are available within the file: K3061

2SK3061 Datasheet PDF Download


2SK3061 pdf