Part Number: K2761

Function: 600V, 10A, N-channel MOSFET ( 1 Ohm, 50W )

Package: TO-220F15 Type

Manufacturer: Fuji Electric

Pinouts:

Description

The K2761 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fuji Electric.

It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK2761 has a maximum drain-source voltage of 600V and a maximum drain current of 10A,
making it suitable for high voltage, high current applications.

 

Features

1. High Speed Switching

2. Low On-Resistance

3. No Secondary Breakdown

4. Low Driving Power

5. High Voltage

6. Repetitive Avalanche Rated.

Absolute Maximum Ratings (TC=25°C)

1. Drain-Source-Voltage : VDS = 600 V
2. Continous Drain Current : ID = 10 A
3. Pulsed Drain Current : ID(puls) = 36 A
4. Gate-Source-Voltage : VGS = ±30 V

Applications

1. Switching Regulators
2. UPS
3. DC-DC converters
4. General Purpose Power Amplifier

Other data sheets are available within the file: 2SK2761, 2SK2761-01MR

K2761 Datasheet PDF Download

 

Part Number: 2SK2114

Function: 450V, N-Channel MOSFET

Package: TO-220CFM Type

Manufacturer: Renesas Electronics

Image and Pinouts:

 

Description

This is 450V, N-Channel MOSFET.

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. No secondary breakdown

5. Suitable for Switching regulator

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 450 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Channel dissipation: Pch =35 A

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High speed power switching

 

Official Site : https://www.renesas.com/us/en/search?keywords=2sk2114

 

2SK2114 Datasheet PDF Download

Other data sheets are available within the file: K2114