MOSFET

FDMA6023PZT Datasheet – 20V, Dual, P-Ch, MOSFET, Array

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Part Number: FDMA6023PZT

Function: Dual P-Channel PowerTrench, -20 V, -3.6 A, 60 mΩ

Package: MicroFET 2×2 Type

Manufacturer: Fairchild Semiconductor

Image:

FDMA6023PZT Datasheet

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.

The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical sizeand is well suited to linear mode applications.

 

Pinouts:

FDMA6023PZT datasheet

Features

1. Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
2. Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
3. Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
4. Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
5. Low Profile-0.55 mm maximum – in the new package MicroFET 2×2 mm Thin
6. HBM ESD protection level > 2.4 kV typical (Note 3)
7. RoHS Compliant
8. Free from halogenated compounds and antimony oxides

Applications

1. Battery protection
2. Battery management
3. Load switch

 

Other data sheets are available within the file: FDMA6023PZ, FDMA6023

 

FDMA6023PZT Datasheet PDF Download


FDMA6023PZT pdf

BSS84AK Datasheet – 50V, 180mA, P-Ch, MOSFET, Transistor

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Part Number: BSS84AK

Marking : %VS

Function: 50 V, 180 mA P-channel Trench MOSFET

Package: SOT-23, TO-236AB Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

BSS84AK datasheet

 

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

1. Logic-level compatible

2. Very fast switching

3. Trench MOSFETtechnology

4. ESD protection up to 1 kV

5. AEC-Q101 qualified

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 180 mA

4. Total Power Dissipation : Pch = 350 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

 

Applications:

1. Relay driver

2. High-speed line driver

3. High-side loadswitch

4. Switching circuits

Other data sheets are available within the file: BSS84A, BSS84

 

BSS84AK Datasheet PDF Download


BSS84AK pdf