Part Number: K2700, 2SK2700

Function: 900V, 3A, MOSFET

Pacakge : TO-220 Type

Manufacturer: Toshiba Semiconductor

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Description

K2700 is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor. 

Features

1. Low drain–source ON resistance : RDS (ON) = 3.7 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 2.6 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3A

4. Channel dissipation: Pch = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Chopper Regulator

2. DC–DC Converter and Motor Drive

K2700 Datasheet

Part Number: K117, 2SK117

Function: 50V, 10mA, N-Channel FET

Package: TO-92 Type

Manufacturer: Toshiba Semiconductor

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Description

K117 is 50V, 10mA, Silicon N Channel JFET. A Silicon N-Channel Junction-Type Field Effect Transistor (N-channel JFET) is a type of field-effect transistor (FET) made from silicon semiconductor material. It is characterized by its N-channel, which means that it operates with electron flow as the charge carriers in the channel region.

N-channel JFETs are commonly used in electronic circuits for various purposes, such as signal amplification, impedance matching, and voltage-controlled resistors. They are known for their high input impedance, which makes them suitable for applications where signal integrity and minimal loading of the source signal are important.

Applications:

Low Noise Audio Amplifier

 

Features

• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)

• High breakdown voltage: VGDS = −50 V

• Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)

• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)

Absolute Maximum Ratings (Ta = 25°C) :

1. Gate-drain voltage : VGDS = – 50 V

2. Gate current : IG = 10 mA

3. Drain power dissipation : PD = 300 mW

4. Junction temperature : Tj = 125 °C

5. Storage temperature range : Tstg = -55 ~ 125 °C

 

K117 PDF Datasheet