This post explains for the MOSFET.

The Part Number is FTP09N20.

The function of this semiconductor is N-Channel MOSFET, Transistor.

The package is TO-251, TO-252, TO-220 Type

Manufacturer: IPS

Preview images :

Description

FTP09N20 is 200V, 9A, N-Channel MOSFET.

Features

1. RoHS Compliant

2. Low ON Resistance

3. Low Gate Charge

4. Peak Current vs Pulse Width Curve
5. Inductive Switching Curves

Ordering Informations :

FTP10N40C N-Channel Enhancement 400 10 550m TO-220 NOW
FTA06N40D N-Channel Enhancement 400 6 1 TO-220 NOW
FTW30N20A N-Channel Enhancement 200 30 75m TO-3PN 4Q
FTP18N20 N-Channel Enhancement 200 18 180m TO-220/263 NOW
FTP09N20 N-Channel Enhancement 200 9 400m TO-251/252/220 NOW
FTD220 N-Channel Enhancement 200 6 600m TO-251/252/220 NOW
FTP23N10A N-Channel Enhancement 100 57 23m TO-220 NOW
FTP540 N-Channel Enhancement 100 33 48m TO-220 NOW
FTD100N10A N-Channel Enhancement 100 17 100m TO-251/252/220 NOW
FTP11N08N N-Channel Enhancement 75 100 11m TO-220 4Q
FTP11N08A N-Channel Enhancement 75 100 11m TO-220 NOW
FTP08N06A N-Channel Enhancement 60 110 8m TO-220 4Q
FTP16N06N N-Channel Enhancement 60 88 16m TO-220 4Q
FTP12N06N N-Channel Enhancement 60 88 16m TO-220 4Q
FTP18N06 N-Channel Enhancement 60 59 18m TO-220 NOW
FTP18N06N N-Channel Enhancement 60 55 18m TO-251/252/220 NOW
FTD36N06N N-Channel Enhancement 60 25 36m TO-251/252/220 NOW
FTD06N03N N-Channel Enhancement 25 110 6m TO-251/252/220 NOW

FTA04N65C N-Channel Enhancement 650 4 2.2 TO-220 NOW
FTA02N65C N-Channel Enhancement 650 2 5.3 TO-220/251/252 NOW
FTN01N65C N-Channel Enhancement 650 1 7 TO-251/252/220 NOW
FTW20N60A N-Channel Enhancement 600 20 0.45 TO-3PN NOW
FTA10N60C N-Channel Enhancement 600 10 0.75 TO-220 NOW
FTA08N60C N-Channel Enhancement 600 8 1.1 TO-220 NOW
FTA07N60C N-Channel Enhancement 600 7 1.2 TO-220/263 NOW
FTA06N60C N-Channel Enhancement 600 6 1.25 TO-220 NOW
FTA04N60D N-Channel Enhancement 600 4 2.2 TO-220 NOW
FTD04N60C N-Channel Enhancement 600 4 2.2 TO-251/252 NOW
FTA02N60C N-Channel Enhancement 600 2 4.4 TO-220 NOW
FTN01N60C N-Channel Enhancement 600 1 8 TO-92/251/252 NOW
FTNCS1N60 N-Channel Enhancement 600 0.7 15 TO-92 NOW
FTZ127 N-Channel Enhancement 600 23m 500 SOT-23 4Q
FTW20N50A N-Channel Enhancement 500 20 300m TO-3PN NOW
FTP14N50C N-Channel Enhancement 500 14 480m TO-220 NOW
FTP08N50D N-Channel Enhancement 500 8 0.85 TO-220 NOW
FTP05N50D N-Channel Enhancement 500 5 1.5 TO-220 NOW […]

2 page

 

Applications:

1. Adaptor

2. Charger

3. SMPS

 

 

FTP09N20 PDF Datasheet

This post explains for the MOSFET.

The Part Number is IRF540NS, IRF540NL.

The function of this semiconductor is 100V, 33A, Power MOSFET.

The package is D2Pak, TO-262 type

Manufacturer: International Rectifier

Preview images :

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.  […]

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 33A

4. Total Power Dissipation: Pd = 130 W

5. Avalanche energy: Ear = 13 mJ

6. Channel temperature: Tch = 175 °C

7. Storage temperature: Tstg = -55 to +175 °C

 

F540NS PDF Datasheet