Part Number: 13003

Function: 400V, NPN Transistor

Package: TO-220

Manufacturer: Elite Enterprises

Images:

Description

13003 is 400V, 1500mA, NPN Epitaxial Silicon Transistor.

This indicates the maximum collector-emitter voltage the transistor can handle without breakdown. In this case, it is 400 volts. This specifies the maximum collector current the transistor can handle without getting damaged. Here, it is 1500 milliamperes or 1.5 amperes.

Features

1. Collector-Emitter Voltage: VCEO=400V

2. Collector Dissipation: PC(max)=1500mW

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 1500 mA

5. Collector Dissipation : Pc =1500 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

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Applications:

1. High voltage switching

13003 Datasheet

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Part Number: BU5027A

Function: 800V, 2.7A, NPN Transistor

Package: TO-220A Type

Manufacturer: Shenzhen Jingdao Electronic ( www.jdsemi.cn )

Images:

Description

BU5027A is 800V, 2.7A, NPN Transistor. 

 

Purpose:

1. Various power switching circuits.

Main feature:

1. Silicon triple diffusion plane technology, good output characteristics, large current capacity.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1100 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 2.7 A

5. Collector Dissipation : Pc = 45 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

BU5027A PDF Datasheet