NPN transistors are commonly used for amplification, switching, and signal processing in electronic circuits. They are often used in various electronic devices and projects to control the flow of current in a circuit.

Part Number: D1303

Function: 20V, 0.3A, NPN Transistor

Package: TO-92S Type

Manufacturer: FGX

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Description

D1303 is NPN Silicon Transistor.  This indicates the maximum collector-emitter voltage (Vce) that the transistor can handle without breaking down. Exceeding this voltage could cause the transistor to fail or get damaged. This represents the maximum collector current (Ic) that the transistor can handle without getting damaged. It signifies the maximum current that can flow from the collector to the emitter. This indicates the type of BJT. NPN transistors have a structure where a thin layer of p-type semiconductor (the base) is sandwiched between two layers of n-type semiconductor (the emitter and collector).

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Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 25 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 12 V

4. Collector Current: Ic = 0.3 A

5. Collector Dissipation : Pc = 0.4 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Audio Muting Application

 

D1303 PDF Datasheet

Part Number: D2118, 2SD2118

Function: 20V, 5A, Silicon NPN Transistor

Package: CPT3, SC-63 Type

Manufacturer: Rohm

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Description

D2118 is 20V, 5A, Epitaxial planar type NPN silicon transistor. 

Characteristics:

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

Features:

1. Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A)

2. Excellent DC current gain characteristics.

3. Complements the 2SB1412.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 5 A

5. Collector Power Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

D2118 PDF Datasheet