1803DFX PDF – 700V, 10A, NPN Transistor – MD1803DFX

This post explains for the Transistor.

The Full Part Number is MD1803DFX.

The Marking Code is 1803DFX.

The package is ISOWATT218FX.

The function of this semiconductor is 700V, High voltage NPN Power Transistor.

The manufacturers of this product is STMicroelectronics.

See the preview image and the PDF file for more information.

Preview images :1803DFX pdf datasheet

Description

This is High voltage NPN Power transistor for standard definition CRT display.

The 1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.

Features

1. State-of-the-art technology: – Diffused collector “enhanced generation”

2. More stable performance versus operating temperature variation

3. Low base drive requirement

4. Tighter hFE range at operating collector current

5. Fully insulated power package U.L. compliant

6. Integrated free wheeling diode

7. In compliance with the 2002/93/EC european directive

1803DFX pinout transistor

Absolute maximum ratings ( Tc=25°C )

1. Collector to Emitter Voltage: Vces = 1500 V

2. Collector to Emitter Voltage: Vceo = 700 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation: Ptot = 57 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. Horizontal deflection output for TV

1803DFX PDF Datasheet

C2026 PDF Datasheet – 14V, 50mA, NPN Transistor – 2SC2026

Part Number: C2026, 2SC2026

Function: 14V, 50mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Inchange Semiconductor

Images:C2026 pdf transistor

Description

C2026 is 14V, 50mA, NPN Transistor.

Features

1. Low Noise : NF= 3.0dB TYP. @ f= 500MHz

2. High Power Gain : Gpe= 15dB TYP. @ f= 500MHz

3. High Gain Bandwidth Product fT= 2.0GHz TYP.

C2026 datasheet pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 14 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 0.25 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Designed for use in low noise amplifiers in the VHF~UHF band.

 

C2026 PDF Datasheet