2N5191 Datasheet PDF – 60V, 4A, NPN Transistor

Part Number: 2N5191

Function: 60V, 4A, NPN power transistor

Package: TO-225 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

2N5191 datasheet

 

Description

This is 60V, 4A, Silicon NPN Power Transistor.

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195.

Features

1. Epoxy Meets UL 94 V−0 @ 0.125 in.

2. These Devices are Pb−Free and are RoHS Compliant*

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 4 A

5. Total Dissipation: Pd = 40 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

1. For use in power amplifier and switching circuits

Other data sheets are available within the file: 2N5190, 2N5190G, 2N5191G, 2N5192

2N5191 Datasheet PDF Download


2N5191 pdf

PH2222 Datasheet PDF – 40V, 0.6A, NPN Transistor, TO-92

Part Number: PH2222

Function: 40V, 0.6A, NPN Transistor.

Package: TO-92

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Image and Pinouts:

PH2222 datasheet

Description

This is 40V, 0.6A, NPN Switching Transistor.

1. NPN switching transistor in a TO-92, SOT54 plastic package.

2. PNP complement : PH2907 and PH2907A.

Features

1. High current (max. 600 mA)
2. Low voltage (max. 40 V).

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 75 V
2. Collector to Emitter Voltage: Vceo = 40 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 600 mA
5. Total Dissipation : Ptot = 500 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. Switching and linear amplification.

Other data sheets are available within the file: PH-2222, PH2222A

PH2222 Datasheet PDF Download


PH2222 pdf