Part Number: BDX33B

Function: 80V, 10A, NPN Transistor

Package: TO-220 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

 

Description

This is 80V, 10A, Darlington Complementary Silicon Power Transistor.

Features

1. High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
2. Collector−Emitter Sustaining Voltage at 100 mAdc
(1) VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C

3. Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C

4. Monolithic Construction with Build−In Base−Emitter Shunt Resistors

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 10 A

5. Total Device Dissipation: Pd = 70 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

These devices are designed for general purpose and low speed switching applications.

BDX33B Datasheet PDF Download

Other data sheets are available within the file: BDX33BG, BDX33C, BDX33CG, BDX34B

Part Number: C640

Function: 30V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Semtech Corporation

Image and Pinouts:

Description

This is NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.

The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current  gain.

As complementary type the PNP transistor ST 2SA733 is recommended.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Power Dissipation : Ptot =150 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

C640 Datasheet PDF Download

Other data sheets are available within the file: 2SC640, ST2SC640