NPN archives - Page 225 of 1048

Features

1. Low current

2. Low voltage

3. Three different gain selections

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 100 mA

5. Total Power Dissipation : Ptot = 250 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. General-purpose switching and amplification

This post explains for the npn transistor.

See the preview image and the PDF file for more information.

Part Number: D526, 2SD526

Function: 80V, 4A, NPN Transistor

Package: TO-220AB Type

Manufacturer: Toshiba Semiconductor

Image

Description

This is 80V, 4A, NPN Triple Diffused Type Transistor.

1. High Power Dissipation : Pc = 30W ( Tc = 25’C )

2. Good Linearity of hFE

3. Complementary to 2SB596

4. Recommend for 20 ~ 25W High Fidelity Audio Frequency Amplifier Output Stage.

D526 Pinout

Maximum Ratings

1. Collector-Base Voltage: Vcbo = 80V

2.Collector-Emitter Voltage: Vceo = 80V

3. Emitter-Base Voltage: Vebo = 5V

4. Collector Current: Ic = 4A

5. Collector Power Dissipation : Pc = 30W

Applications

1. Power Amplifier