Part Number: C3788

Function: 200V, 100mA, NPN Transistor

Package: TO-126 Type

Manufacturer: SANYO (Panasonic)

Image:

 

Description

This is 200V, 100mA, NPN Epitaxial Planar Silicon Transistor.

Features

1. High breakdown voltage : VCEO≥200V.

2 Small reverse transfer capacitance and excellent high frequency cahaceteristic
: Cre = 1.2pF (NPN), 1.7pF (PNP).

3. Adoption of FBET process.

Pinouts:

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 200 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 1.3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. High-Definition CRT Display Video Output

C3788 Datasheet PDF Download

Other data sheets are available within the file: 2SC3788

Part Number: OTC6050

Function: Power Darlington NPN Transistor / 450V, 20A

Manufacturer: Optek Technology

Image and Pinouts:

 

Description

This is a 450V, 20A, NPN Power Darlington Transistor.

 

Features

1. Monolithic Planar Die

2. Contact Metallization

3. Base and Emitter : Aluminum

4. Collector : Titanium, Nickel Silver

5. Die Size : 220 x .185 x .010 inch

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 450 V

2. Collector to Emitter Voltage: Vceo = 450 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 20 A

Other data sheets are available within the file: OTC1015, OTC6030, OTC-6050

 

OTC6050 Datasheet PDF Download

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