Part Number: BUH516TH ( = D3402, BU508AFI, THD277HI )
Function: 700V, 8A, NPN Transistor
Package: ISOWATT218 type
Manufacturer: STMicroelectronics
Image:
Description
This is 700V, 8A, NPN Silicon Multiepitaxial Mesa Transistor.
This device is manufactured using Multiepitaxial Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure to enhance switching speeds
Features
1. High voltage, high speed
2. Low collector saturation voltage
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1700 V
2. Collector to Emitter Voltage: Vceo = 700 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 8 A
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -55 ~ +150°C
Pinout:
Applications
1. Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors.
2. Switching power supplies for TV’s and monitors.
BUH516TH Datasheet
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