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C828A Datasheet PDF – 45V, 0.1A, NPN Transistor, 2SC828A

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Part Number: C828A, 2SC828A

Function: 45V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba

Image

C828A transistor

Description

This is 45V, 100mA, NPN Silicon Epitaxial Planar Transistor.

Features

1. Large DC current gain hFE

Pinouts :
C828 datasheet pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 45 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C828A Transistor
2SC828A specs

Applications:

1. Small Signal Amplifier

2. Switching and AF amplifier

C828A Datasheet PDF

2sc828 pdf


 

Other data sheets are available within the file: 2SC828, SC828

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2SC2500 Transistor – 10V, 2A, NPN ( Datasheet PDF )

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Part Number: 2SC2500

Function: 30V, 2A, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba

Image:

2SC2500 datasheet

 

Description

This is Silicon NPN Epitaxial Type Transistor.

Features

•  High DC current gain and excellent hFElinearity
: hFE (1)= 140 to 600 (VCE= 1 V, IC= 0.5 A)
: hFE (2)= 70 (min), 200 (typ.), (VCE= 1 V, IC= 2 A)

•  Low saturation voltage
: VCE (sat)= 0.5 V (max) (IC= 2 A, IB= 50 mA)
Absolute Maximum Ratings (Ta = 25°C)

Pinouts:

components

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V
2. Collector to Emitter Voltage: Vceo = 10 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 2 A
5. Collector Dissipation : Pc = 900 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Strobe Flash

2. Medium-Power Amplifier

2SC2500 Datasheet PDF Download


2SC2500 pdf

Other data sheets are available within the file: C2500