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2N3054 Datasheet – 55V, 4A, NPN, Power Transistor

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Part Number: 2N3054

Description

55V, 4A, Silicon NPN Power transistor

Package: TO-66 Type

Manufacturer: Central Semiconductor Corp

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Description

The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A devices are silicon NPN power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.

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MAXIMUM RATINGS (TC=25°C)

1. Collector-Base Voltage : VCBO = 90 V
2. Collector-Emitter Voltage : VCEV = 90 V
3. Collector-Emitter Voltage : VCER = 60 V
4. Collector-Emitter Voltage : VCEO = 55 V
5. Emitter-Base Voltage : VEBO = 7.0 V
6. Continuous Collector Current : IC = 4.0 A
7. Continuous Base Current : IB = 2.0 A
8. Power Dissipation (2N3054) : PD = 25 W

 

2N3054 Datasheet


 

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2SC4669 Datasheet PDF – 40V, 10A, NPN Transistor

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Part Number: 2SC4669

Function: 10A, 40V, Switching Power NPN Transistor

Package: E-pack Type

Manufacturer: Shindengen

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2SC4669 datasheet

Description

This is 10A, 60V, Switching Power Silicon NPN Transistor.

Absolute maximum ratings :

1. Storage Temperature : Tstg = -55～150 °C
2. Junction Temperature: Tj  =150 °C
3. Collector to Base Voltage : VCBO = 60 V
4. Collector to Emitter Voltage : VCEO = 40 V
5. Emitter to Base Voltage : VEBO = 7 V
6. Collector Current DC : IC = 10 A
7. Collector Current Peak : ICP = 20 A
8. Base Current DC : IB = 1.5 A
9. Base Current Peak : IBP = 2 A
10. Total Transistor Dissipation : PT = 10 W ( Tc = 25°C )

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Other data sheets are available within the file: C4669, TE10S4

2SC4669 Datasheet PDF Download


2SC4669 pdf