NPN archives - Page 36 of 1048

This post explains for the NPN Transistor.

The Part Number is C2694, 2SC2694.

The function of this semiconductor is RF Power Transistor.

Manufacturer: Mitsubishi Electric Semiconductor

Preview images: C2694 Transistor datasheet

Description

The C2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

1. High power gain

2. Emitter ballasted contruction and gold metallization for high reliability and good performances.

3. Low thermal resistance ceramic package with flange.

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 17 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 20 A

5. Collector Dissipation : Pc = 5.5 W

6. Junction Temperature: Tj = 175°C

7. Storage Temperature: Tsg = -55 ~ +175°C

1. 50 to 60 watts output power amlifiers in VHF band mobile radio applications.

Description

The C4131 is 50V, 15A, Silicon NPN Epitaxial Planar Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 15 V

4. Collector Current: Ic = 15 A

5. Collector Dissipation : Pc = 60 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. DC-DC Converter

2. Emergency Lighting Inverter