NPN

2SC4747 Transistor, 800V, NPN ( Datasheet PDF )

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Part Number: 2SC4747

Function: 800V, 10A, NPN Transistor

Package: TO-3PFM Type

Manufacturer: Hitachi (Renesas Electronics)

Image and Pinouts:

2SC4747 datasheet

 

Description

This is 800V, Silicon NPN Triple Diffused Transistor.

Features

1. High breakdown voltage V cbo= 1500 V

2. High speed switching  tf ≤ 0.3 µs

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

components

Applications:

1. Character display horizontal deflection output

2SC4747 Datasheet PDF Download


2SC4747 pdf

Other data sheets are available within the file: C4747

C4204 Datasheet PDF- Vcbo=30V, NPN Transistor – Sanyo

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Part Number: C4204

Function: 25V, 0.7A, NPN Transistor

Package: TO-92 Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:
C4204 datasheet

Description

The C4204 is 25V, 0.7A, NPN Epitaxial Planar Silicon Transistor.

Features

1. Adoption of MBIT process.
2. High DC current gain (hFE=800 to 3200).
3. Large current capacity (IC=0.7A).
4. Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V).
5. High VEBO(VEBO≥15V)

Applications

1. AF amplifier, various drivers

 

Absolute Maximum Ratings

1. Collector-to-Base Voltage: VCBO = 30 V
2. Collector-to-Emitter Voltage: VCEO = 25 V
3. Emitter-to-Base Voltage: VEBO = 15 V
4. Collector Current: IC = 0.7 A
5. Collector Current (Pulse): ICP = 1.5 A
6. Collector Dissipation: PC = 0.6 W

Test Circuit:

circuit

Other data sheets are available within the file: 2SC4204

C4204 Datasheet PDF Download

C4204 pdf