13003BR Datasheet – 400V, 1A, NPN Transistor

Part Number: 13003BR

Function: MJE / MJE SERIES, 400V, 1A, NPN TRANSISTOR

Package: TO-126, TO-126S Type

Manufacturer: Shenzhen SI Semiconductors

Image and Pinouts:

13003BR datasheet

 

Description

This is 400V, 1A, NPN TRANSISTOR.

Features

1. HIGH VOLTAGE CAPABILITY

2. HIGH SPEED SWITCHING

3. WIDE SOA

4. RoHS COMPLIANT

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 1 A

5. Collector Dissipation : Pc =20 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

components

Applications:

1. FLUORESCENT LAMP

2. ELECTRONIC BALLAST

Other data sheets are available within the file: MJE13003BR

13003BR Datasheet PDF Download

13003BR pdf

BDY53 Datasheet PDF – 60V, 12A, NPN Silicon Transistor

Part Number: BDY53

Function: NPN Silicon Transistor

Package: TO-3 Type

Manufacturer: Comset Semiconductors

Image and Pinouts:

BDY53 datasheet

Description

This is 60V, 12A, NPN Silicon Transistor.

Absolute maximum ratings

1. Collector-Emitter Voltage,  Vceo :  60V
2. Collector-Base Voltage, Vcbo : 100V
3. Emitter-Base Voltage, Vebo :  7V
4. Collector Current, Ic : 12A
5. Base Current, Ib : 5A
6. Power Dissipation : Ptot = 60 W

Applications

1. LF Large Signal Power
2. High Current Fast Switching

Other data sheets are available within the file: BDY54

BDY53 Datasheet PDF Download


BDY53 pdf

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