2SC5177 Transistor – 5V, 10mA, NPN ( Datasheet PDF )

Part Number: 2SC5177

Marking : T84

Function: 5V, 10mA,  NPN Transistor

Package: Mini-Mold Package

Manufacturer: Renesas Electronics

Image and Pinouts:

2SC5177 datasheet

 

Description

This is NPN epitaxial silicon transistor.

Features

1. Low Current Consumption and High Gain

2. Mini-Mold package EIAJ : SC-59

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage VCBO : 5 V

2. Collector to Emitter Voltage VCEO: 3 V

3. Emitter to Base Voltage VEBO : 2 V

4. Collector Current IC : 10 mA

5. Total Power Dissipation PT : 30 mW

 

Applications:

1. Low-noise microwave

 

2SC5177 Datasheet PDF Download


2SC5177 pdf

Other data sheets are available within the file: C5177

SD1127 Datasheet PDF – 18V, 0.64A, RF NPN Transistor

Part Number: SD1127

Function: RF NPN Transistor

Package: TO-39 Type

Manufacturer: Microsemi Corporation

Image and Pinouts:

SD1127 datasheet

 

Description

The SD1127 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted on a beryllia pill to isolate the collector lead and ground the emitter lead for high gain performance.

The transistor is a 12.5 volt silicon npn planar transistor designed for economical VHF communications.

Features

1. 175 MHz

2. 12.5 VOLTS

3. POUT= 4.0 W MINIMUM

4. GP = 12.0 dB

5. GROUNDED EMITTER

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 36 V

2. Collector to Emitter Voltage: Vceo = 18 V

4. Collector Current: Ic = 0.64 A

5. Total Power Dissipation: Pdiss = 8 W

6. Junction Temperature: Tj = 200°C

7. Storage Temperature: Tsg = -65 ~ +200°C

 

Other data sheets are available within the file: SD-1127

SD1127 Datasheet PDF Download

SD1127 pdf