UNR5211 Datasheet PDF – 50V, 100mA, NPN Transistor

Part Number: UNR5211

Marking Code : 8A

Function: Silicon NPN epitaxial planar type Transistor / Transistor with built-in Resistor

Manufacturer: Panasonic Corporation

Pinouts:

UNR5211 datasheet

 

Description

This is 50V, 100mA, NPN Transistor ( SMD Type )

Applications:

1. For digital circuits

 

Features

1. Costs can be reduced through downsizing of the equipment and reduction of the number of parts

2. S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Collector Current: Ic = 100 mA

4. Total Power Dissipation : Pt = 150 mW

5. Junction Temperature: Tj = 150°C

6. Storage Temperature: Tsg = -55 ~ +150°C

 

UNR5211 Datasheet PDF Download


UNR5211 pdf

Other data sheets are available within the file: UNR5210, UNR5212, UNR5213, UNR5214

S9013 Datasheet – 25V, NPN Transistor

Part Number: S9013 ( = SS9013 )

Function: NPN Silicon Transistor

Package: TO-92 Type

Manufacturer: MCC

Image

S9013 NPN Transistor

Description

This is 25V, NPN Transistor. S9013 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

Features

1. General purpose application.

2. Switching application

Electrical Characteristics

1. Collector-Base Breakdown Voltage : V(BR)CBO : 40 Vdc

2. Collector-Emitter Breakdown Voltage : V(BR)CEO : 25 Vdc

3. Emitter-Base Breakdown Voltage : V(BR)EBO : 5.0 Vdc

Pinouts:

S9013 datasheet pinout

Features

1. Capable of 0.625Watts(Tamb=25’C) of Power Dissipation.

2. Collector-current : 0.5A

3. Collector-base Voltage : 40V

4. Operating and storage junction temperature range : -55’C to +150’C

Applications

1. High Collector Current.

 

S9013 Datasheet PDF Download

S9013 pdf


 

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