2SC3708 Transistor – 80V, 500mA, NPN ( Datasheet PDF )

Part Number: 2SC3708

Function: 80V, 0.5A, NPN Transistor

Package: TO-92 Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SC3708 datasheet

 

Description

This is NPN Epitaxial Planar Silicon Transistor.

Features

1. Adoption of FBET process.
2. AF amp, AF power amp.
3. High breakdown voltage : V ceo>80V

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 500 mA

5. Total Dissipation : Pc = 600 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Low-Frequency Driver

2SC3708 Datasheet PDF Download


2SC3708 pdf

Other data sheets are available within the file: 2SA1450, A1450, C3708

D600K Datasheet PDF – 120V, 1A, NPN Transistor – 2SD600K

This is one of the transistor types.

Part Number: D600K, 2SD600K

Function : NPN Power transistor

Package: TO-126 Type

Manufacturer: Sanyo, SavantIC

Image

D600K NPN transistor

Description

This is 120V, 1A, NPN Transistor.

1. Complement to type 2SB631/631K
2. High breakdown voltage VCEO100/120V
3. High current 1A
4. Low saturation voltage

Pinout

D600K datasheet pinout

Features

1. High breakdown voltage VCEO 120V, High current 1A.
2. Low saturation voltage, excellent hFE linearity

Absolute Maximum Ratings at Ta = 25˚C

1. Collector-base voltage : VCBO = 120 V
2. Collector-emitter voltage : VCEO = 120 V
3. Emitter-base voltage : VEBO = 5 V
4. Collector current : IC = 1 A
5. Power Dissipation(Ta=25℃) : PC = 1 W
6. Power Dissipation(Tc=25℃) : PC = 8 W

Applications

For low-frequency power amplifier applications

 

 

D600K Datasheet


 

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