Part Number: C2166, 2SC2166

Function: 75V, 4A, Silicon NPN Power Transistor

Package: TO-220 Type

Manufacturer: Mitsubishi Electric Semiconductor

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Description

The C2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.

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Features

1. High power gain : Gpe ≥ 13.8 dB

2. Emitter ballasted construction for high reliability and good performances.

3. TO-220 similar package is combinient for mounting

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 75 V

2. Collector to Emitter Voltage: Vceo = 75 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 4 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. 3 to 4 watts output power amplifiers in HF band mobile radio applications.

C2166 PDF Datasheet

Part Number: D1650, 2SD1650

Function: 600V, 3.5A, NPN Transistor

Package: TO-3PML Type

Manufacturer: Wing Shing Electronic

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Description

D1650 is 600V, 3.5A, NPN Transistor. This transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers.

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage: Vceo = 600 V

2. Collector Current: Ic = 3.5 A

3. Total Power Dissipation : Pc = 50 W

4. Junction Temperature: Tj = 150°C

5. Storage Temperature: Tsg = -55 ~ +150°C

D1650 PDF Datasheet

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