NPN

C1213 Datasheet – Vcbo = 35V, Silicon NPN Epitaxial – Hitachi

Posted on by pinout

Part Number: C1213, 2SC1213

Description

Silicon NPN Epitaxial

Package: TO 92 Type

Manufacturer: Hitachi Semiconductor

Image

C1213 datasheet image

Description
1. Low frequency amplifier
2. Complementary pair with 2SA673 and 2SA673A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 35 V
2. Collector to emitter voltage : VCEO = 35 V
3. Emitter to base voltage : VEBO = 4V
4. Collector current IC = 500 mA
5. Collector power dissipation : PC = 400 mW
6. Junction temperature : Tj 150 ‘C

C1213 Datasheet


 

Related articles across the web

2SC5125 Datasheet PDF – 35V, 25A, RF Power NPN Transistor

Posted on by pinout

Part Number: 2SC5125

Function: 35V, 25A, RF Power NPN Epitaxail Planar Transistor

Package: T-40E Type

Manufacturer: MITSUBISHI ELECTRIC

Pinouts:

2SC5125 datasheet

 

Description

2SC5152 is a silicon NPN epitaxail planar type transistor specifically designed for high power amplifiers in VHF band.

 

Features

1. Emitter ballasted construction.
2. High reliability due to gold metalization die.
3. Flange type ceramic package.

Absoulte maximum ratings

1. Collector-base voltage : Vcbo = 35 V
2. Emitter-base voltage : Vebo = 4 V
3. Collector-emitter voltage : Vceo = 17 V
4. Collector current : 25 A
5. Collector dissipation : 170 W

Applications

For output stage of 70W power amplifier in VHF band.

 

Other data sheets are available within the file: C5125

2SC5125 Datasheet PDF Download


2SC5125 pdf

Related articles across the web