RF

BXMP1036 Datasheet PDF – RF Amplifier

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Part Number: BXMP1036

Function: RF AMPLIFIER

Package: Module Type

Manufacturer: Spectrum Microwave

Image:

BXMP1036 RF Amplifier

Description

1. High Gain: 30 dB Typical

2. Low Noise Figure: 2.0 dB Typical

3. Operating Temp. – 40 ºC to +85 ºC

4. Environmental Screening Available

 

Maximum Ratings :

1. Ambient Operating Temperature : -55°C to +100 °C

2. Storage Temperature : -62°C to +125 °C

3. Case Temperature : +125 °C

4. DC Voltage : +18 Volts

5. Continuous RF Input Power : +13 dBm

6. Short Term RF Input Power : 50 Milliwatts (1 Minute Max.)

7. Maximum Peak Power : 0.5 Watt (3 μsec Max.)

BXMP1036 datasheet

BXMP1036 Datasheet PDF Download


BXMP1036 pdf

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2SC1947 Datasheet PDF – RF Power Transistor – Mitsubishi

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Part Number: 2SC1947

Function: 17V, 1A, RF Power NPN Transistor

Package: TO-39, T-8E Type

Manufacturer: MITSUBISHI ELECTRIC

Pinout

2SC1947 Pinout Image

 

Description

2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.

Features

1. High power gain : Gpe > 10.7dB @ Vcc=13.5V, Po=3.5W, f=175MHz
2. TO-39 metal seeled package for high reliability.
3. Emitter electrode is connected electrically to the case

Absoulte maximum ratings ( Tc = 25’C )

1. Collector to base voltage : Vcbo = 35 V
2. Emitter to base voltage : Vebo = 4 V
3. Collector to emitter voltage : Vceo = 17 V
4. Collector Current: Ic = 1 A
5. Junction dissipation : Pc = 10 W

 

2SC1947 Datasheet

Application

1. 1 to 3 watt power amplifiers in VHF band mobile radio applications.

Other data sheets are available within the file: C1947

2SC1947 Datasheet PDF Download

2SC1947 pdf


 

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