2SC3955 Datasheet PDF – 200V, 0.1A, NPN Transistor – Sanyo

Part Number: 2SC3955

Function: 200V, 0.1A, NPN Epitaxial Planar Silicon Transistor

Package: TO-126ML Type

Manufacturer: SANYO (Panasonic)

Pinouts:

2SC3955 datasheet

 

Description

1. High gain-bandwidth product : fT=300MHz.
2. High breakdown voltage : VCEO=200Vmin.
3. Small reverse transfer capacitance and excellent high frequency characteristics :
Cre =1.5pF/NPN, 1.8pF/ PNP.
4. Complementary PNP and NPN types.
5. Adoption of FBET process.
6. Micaless type : TO-126 plastic package.

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 200 V
2. Collector-to-Emitter Voltage : VCEO = 200 V
3. Emitter-to-Base Voltage : VEBO = 3 V
4. Collector Current : IC = 100 mA
5. Peak Collector Current : ICP = 200 mA
6. Collector Dissipation : PC = 1.3 W

Applications

1. High-Definition CRT Display Video Output
2. Wide-band amplifier.

 

Other data sheets are available within the file: 2SA1540, A1540, C3955

2SC3955 Datasheet PDF Download


2SC3955 pdf

D2396 Datasheet PDF – NPN TR, Vcbo = 80V, Ic = 3A – Rohm

Part Number: D2396, 2SD2396

Function : NPN Transistor ( Vcbo = 80V, Ic = 3A )

Package: TO-220FN Type

Manufacturer: Rohm

Image

d2396-npn-transistor
D2396 image

Features

1. High dc current gain ( hFE ), typically hFE = 1000
2. Low collector saturaion voltage, typically Vce(sat) = 0.3V at Ic/Ib = 2A / 0.05A
3. Easily insulated from the heat sink as the fin is molded
4. Wide safe operating area ( SOA )

Applications

1. Low frequency power amplifier

Pinout

D2396 datasheet

Absolute maximum ratings (Ta=25’C)

1. Collector-to-base voltage : Vcbo = 80 V

2. Collector-to-emitter voltage : Vceo = 60 V

3. Emitter-to-base voltage : Vebo = 6 V

4. Collector Curret : Ic = 3A

5. Collector dissipation ( Tc=25’C)  : Pc = 30W

 

D2396 Datasheet

D2396 pdf


 

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