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2SC2655 Datasheet – Vcbo=50V, NPN Transistor – Toshiba

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Part Number: 2SC2655

Function: Power Amplifier, Silicon NPN Epitaxial Type (PCT Process)

Package: TO-92MOD

Manufacturer: Toshiba

Image

2SC2655

Description

Power Amplifier Applications
Power Switching Applications

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1020.

Pinouts:
2SC2655 pinout

Maximum Ratings (Ta = 25°C)

1. Collector-base voltage : VCBO = 50 V
2. Collector-emitter voltage : VCEO = 50 V
3. Emitter-base voltage : VEBO = 5 V
4. Collector current : IC = 2 A
5. Base current : IB = 0.5 A
6. Collector power dissipation : PC = 900 mW

 

2SC2655 Datasheet PDF


 

Similar features and reference parts


 

Other data sheets are available within the file: C2655

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D649 Datasheet PDF – Silicon NPN Power Transistor (3A, 1500V)

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Part Number: D649

Function: High Voltage NPN Power Transistors (3A, 1500V)

Package: TO-3 type

Manufacturer: Inchange Semiconductor

Pinouts:

D649 datasheet

 

Description

The  2SD649  is a silicon epitaxial – base mesa NPN transist or mounted in JEDEC TO- 3 metal case.

Features

1. High Vces breakdown voltage.
2. High collector peak current
3. High reliability

Absolute Maximum Ratings

1. Collector-Base Voltage : VCBO = 1500 V
2. Collector-Emitter Voltage : VCES = 1500 V
3. Emitter-Base Voltage : VEBO = 5 V
4. Collector Current- Continuous : IC = 3 A
5. Collector Current-Pulse : ICP = 5 A
6. Collector Power Dissipation : PC = 35 W

components
Other data sheets are available within the file: 2SD649

D649 Datasheet PDF Download

D649 pdf