NPN

D1555 Datasheet PDF – 3DD1555, 1500V, 5A, NPN Transistor

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The 3DD1555 is a high-voltage NPN bipolar power transistor specifically engineered for horizontal deflection output (H.O.T) stages in CRT displays such as color TVs and monitors. It is optimized for high-voltage switching, fast fall time, and rugged avalanche capability.

Part Number: 3DD1555

Function: Silicon NPN Bipolar Transistor

Package: TO-3P(H)IS Type

Manufacturer: Jilin Sino-Microelectronics

See the preview image and the PDF file for more information.

Pinouts:

D1555 datasheet

Description

D1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

Absolute maximum ratings ( Tc=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 5 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Key Design Insights

  • High Voltage Margin: 1500V VCBO is critical for flyback spikes
  • Switching Speed: Fast fall time reduces switching loss and heating
  • Avalanche Ruggedness: Must absorb inductive energy safely
  • Thermal Management: Requires proper heatsinking in operation
  • Base Drive: Requires strong base drive for fast saturation and turn-off

Design Considerations

  • Use proper snubber (RC or RCD clamp) to limit overvoltage
  • Ensure fast base discharge (to avoid storage time issues)
  • Avoid secondary breakdown by respecting SOA (Safe Operating Area)
  • Layout must minimize parasitic inductance
  • Thermal coupling to heatsink is mandatory for reliability

Alternative / Equivalent Devices

  • 2SC5296
  • BU508A / BU508DF
  • D1555 series variants
  • J6810 (similar application class)
  • 2SD1555

Applications

  • CRT color TV horizontal deflection output stage
  • CRT monitor deflection circuits
  • High-voltage pulse switching applications

Other data sheets are available within the file: 3DD1555, 3DD1555-O-A-N-D

D1555 Datasheet PDF Download


3DD1555 pdf

C5198 Transistor – NPN Transisor, 140V, 10A, 2SC5198

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C5198 is Silicon NPN Triple Diffused Type Transistor.

Part Number: 2SC5198

Function: NPN Transisor, 140V, 10A

Package: TO-3PN Type

Manufacturer: Toshiba

Image:

C5198 datasheet

 

Description

C5198 is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits. It is often paired with its complementary PNP transistor 2SA1941. It’s widely used in high-quality audio amplifiers because of its robust power handling, low distortion, and good linearity.

 

Features

1.  High breakdown voltage: VCEO= 140 V (min)

2. Complementary to 2SA1941

3. Suitable for use in 70-W high fidelity audio amplifier’s output stage

 

Electrical Characteristics (Ta = 25°C)

components

 

Absolute Maximum Ratings (Ta= 25°C)

1. Collector-base voltage : VCBO = 140 V

2. Collector-emitter voltage : VCEO = 140 V

3. Emitter-base voltage : VEBO = 5 V

4. Collector current : IC = 10 A

5. Base current : IB = 1 A

6. Collector power dissipation  (Tc= 25°C) : PC = 100 W

7. Junction temperature : Tj  = 150 °C

 

Applications

1. Audio power amplifier output stages

2. Power supply regulation and switching

 

Equivalent & Alternative Parts

1. 2SA1941 (PNP) – Complementary partner for push-pull audio stages

2. 2SC5200 (NPN) – Similar high-power audio transistor (VCEO 230 V, 15 A)

3. MJ21194 (NPN) – Audio power transistor with higher current (VCEO 250 V, 16 A)

 

 

Other data sheets are available within the file:  2SC5198

 

C5198 Datasheet Download


C5198 pdf

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