C5198 Transistor – NPN Transisor, 140V, 10A, 2SC5198 – Toshiba

Part Number: C5198

Function: NPN Transisor, 140V, 10A

Package: TO-3PN Type

Manufacturer: Toshiba


C5198 datasheet



C5198 is Silicon NPN Triple Diffused Type Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.



1.  High breakdown voltage: VCEO= 140 V (min)

2. Complementary to 2SA1941

3. Suitable for use in 70-W high fidelity audio amplifier’s output stage


Electrical Characteristics (Ta = 25°C)


Absolute Maximum Ratings (Ta= 25°C)

1. Collector-base voltage : VCBO = 140 V

2. Collector-emitter voltage : VCEO = 140 V

3. Emitter-base voltage : VEBO = 5 V

4. Collector current : IC = 10 A

5. Base current : IB = 1 A

6. Collector power dissipation  (Tc= 25°C) : PC = 100 W

7. Junction temperature : Tj  = 150 °C



1. Power Amplifier

Other data sheets are available within the file:  2SC5198

C5198 Datasheet PDF Download

C5198 pdf

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